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Fully Depleted Silicon-On-Insulator

Fully Depleted Silicon-On-Insulator
Nanodevices, Mechanisms and Characterization

by Sorin Cristoloveanu

  • Publisher : Elsevier
  • Release : 2021-08-04
  • Pages : 384
  • ISBN : 0128231653
  • Language : En, Es, Fr & De
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Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices." In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator "It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan "FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France "This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." --Professor Alexander Zaslavsky, Brown University, USA "A superbly written book on SOI technology by a master in the field." --Professor Yuan Taur, University of California, San Diego, USA "The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author "It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book." Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices Discusses FD-SOI’s most promising device structures for memory, sensing and emerging applications

Silicon-on-insulator Technology and Devices XI

Silicon-on-insulator Technology and Devices XI
Proceedings of the International Symposium

by Sorin Cristoloveanu,Electrochemical Society. Electronics Division

  • Publisher : The Electrochemical Society
  • Release : 2003
  • Pages : 522
  • ISBN : 9781566773751
  • Language : En, Es, Fr & De
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Silicon-on-insulator Technology and Devices XII

Silicon-on-insulator Technology and Devices XII
Proceedings of the International Symposium

by George K. Celler,Sorin Cristoloveanu

  • Publisher : The Electrochemical Society
  • Release : 2005
  • Pages : 396
  • ISBN : 9781566774611
  • Language : En, Es, Fr & De
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Electrical Characterization of Silicon-on-Insulator Materials and Devices

Electrical Characterization of Silicon-on-Insulator Materials and Devices
A Book

by Sorin Cristoloveanu,Sheng Li

  • Publisher : Springer Science & Business Media
  • Release : 2013-11-27
  • Pages : 381
  • ISBN : 1461522455
  • Language : En, Es, Fr & De
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Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

A Design Study on the Scaling Limit of Ultra-thin Silicon-on-insulator MOSFETs

A Design Study on the Scaling Limit of Ultra-thin Silicon-on-insulator MOSFETs
A Book

by Wei-Yuan Lu

  • Publisher : Unknown Publisher
  • Release : 2007
  • Pages : 124
  • ISBN : 9781109879605
  • Language : En, Es, Fr & De
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As bulk CMOS is approaching its scaling limit, SOI CMOS is gaining more and more attentions and is considered as a potential candidate for achieving 10-nm CMOS. Fully-depleted SOI MOSFETs have several inherent advantages over bulk MOSFETs-low junction capacitance, no body effect and no need for body doping to confine gate depletion. This dissertation presents a comprehensive, 2-D simulation-based design study on the scaling limit of ultra-thin silicon-on-insulator MOSFETs.

Frontiers In Electronics: Selected Papers From The Workshop On Frontiers In Electronics 2013 (Wofe-2013)

Frontiers In Electronics: Selected Papers From The Workshop On Frontiers In Electronics 2013 (Wofe-2013)
A Book

by Sorin Cristoloveanu,Michael S Shur

  • Publisher : World Scientific
  • Release : 2014-12-15
  • Pages : 188
  • ISBN : 9814656925
  • Language : En, Es, Fr & De
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This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.

Nanowire Transistors

Nanowire Transistors
Physics of Devices and Materials in One Dimension

by Jean-Pierre Colinge,James C. Greer

  • Publisher : Cambridge University Press
  • Release : 2016-04-30
  • Pages : 324
  • ISBN : 1107052408
  • Language : En, Es, Fr & De
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A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.

Silicon-on-Insulator Technology and Devices 14

Silicon-on-Insulator Technology and Devices 14
A Book

by Yasuhisa Omura

  • Publisher : The Electrochemical Society
  • Release : 2009-05
  • Pages : 343
  • ISBN : 1566777127
  • Language : En, Es, Fr & De
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This issue of ECS Transactions contains papers on silicon-on-insulator subjects including devices, device physics, modelling, simulations, microelectronics, photonics, nano-technology, integrated circuits, radiation hardness, material characterization, reliability, and sensors

Frontiers in Electronics

Frontiers in Electronics
Future Chips

by Yoon Soo Park,Michael S Shur,William Tang

  • Publisher : World Scientific
  • Release : 2003-01-29
  • Pages : 400
  • ISBN : 9814487082
  • Language : En, Es, Fr & De
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The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues. Contents:Optical Wave Propagation in Periodic Structures (A Yariv & S Mookherjea)MEMS Technology for Advanced Telecommunication Applications (H-G Lee et al.)Low Temperature Physics at Room Temperature in Water: Charge Inversion in Chemical and Biological Systems (A Yu Grosberg et al.)Materials for Strained Silicon Devices (P M Mooney)System-on-Chip Integration (R R Doering)Nanoelectronics: Some Current Aspects and Prospects (R Hull et al.)Electrotextiles (E Ethridge & D Urban)System Impact of Silicon Carbide Power Devices (B Ozpineci et al.)Hot-Phonon Limited Electron Energy Relaxation in AIN/GaN (A Matulionis et al.)Polar-Optical Phonon Enhancement of Harmonic Generation in Schottky Diodes (B Gelmont et al.)Environmental Sensing of Chemical and Biological Warfare Agents in the THz Region (A C Samuels et al.)Thermal Management in Optoelectronics (D K Johnstone)Spectral Response Measurements of Short Wave Infrared Detectors (SWIR) (T F Refaat et al.)Full-Chip Power-Supply Noise: The Effect of On-Chip Power-Rail Inductance (C W Fok & D L Pulfrey)Quantum Dot Superlattices in a Constant Electric Field: Localization and Bloch Oscillations (R A Suris & I A Dmitriev)and other papers Readership: Scientists, engineers and graduate students working in the area of microelectronics, semiconductor materials and devices. Keywords:Microelectronics;Nanoelectronics;Integrated Circuits;Nanostructures;Solid State Lighting;Semiconductors

Perspectives, Science and Technologies for Novel Silicon on Insulator Devices

Perspectives, Science and Technologies for Novel Silicon on Insulator Devices
A Book

by Peter L.F. Hemment,Vladimir S. Lysenko,Alexei N. Nazarov

  • Publisher : Springer Science & Business Media
  • Release : 2012-12-06
  • Pages : 344
  • ISBN : 9401142610
  • Language : En, Es, Fr & De
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This proceedings volume contains the contributions of the speakers who attended the NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" held at the Sanatorium Pushcha OLema, Kyiv, th Ukraine from It" to 15 October 1998. This meeting was the second NATO Silicon on Insulator (SOl) Workshop to be held in st the Ukraine where the first meeting (Gurzuf, Crimea, 1 to 4th November 1994) focussed upon the physical and technical problems to be addressed in order to exploit the advantages of incorporating SOl materials in device and sensor technologies. On this occasion emphasis was placed upon firstly, promoting the use of SOl substrates for a range of novel device and circuit applications and secondly, addressing the economic issues of incorporating SOl processing technologies and device technologies within the framework of the resources available within the laboratories and factories of the Newly Independent States (NIS). The primary goal of both workshops has been the breaking of the barriers that inhibit closer collaboration between scientists and engineers in the NATO countries and the NIS. Indeed, it was a pleasure for attendees at the first meeting to renew acquaintances and for the first time attendees to make new contacts and enjoy the warm hospitality offered by our hosts in Kyiv. An outcome was the forging of new links and concrete proposals for future collaborations.

Frontiers in Electronics

Frontiers in Electronics
Future Chips : Proceedings of the 2002 Workshop on Frontiers in Electronics (WOFE-02), St Croix, Virgin Islands, USA, 6-11 January 2002

by Yoon-Soo Park,Michael Shur,William Tang

  • Publisher : World Scientific
  • Release : 2002
  • Pages : 345
  • ISBN : 9789812796912
  • Language : En, Es, Fr & De
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The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues. Contents: Optical Wave Propagation in Periodic Structures (A Yariv & S Mookherjea); MEMS Technology for Advanced Telecommunication Applications (H-G Lee et al.); Low Temperature Physics at Room Temperature in Water: Charge Inversion in Chemical and Biological Systems (A Yu Grosberg et al.); Materials for Strained Silicon Devices (P M Mooney); System-on-Chip Integration (R R Doering); Nanoelectronics: Some Current Aspects and Prospects (R Hull et al.); Electrotextiles (E Ethridge & D Urban); System Impact of Silicon Carbide Power Devices (B Ozpineci et al.); Hot-Phonon Limited Electron Energy Relaxation in AIN/GaN (A Matulionis et al.); Polar-Optical Phonon Enhancement of Harmonic Generation in Schottky Diodes (B Gelmont et al.); Environmental Sensing of Chemical and Biological Warfare Agents in the THz Region (A C Samuels et al.); Thermal Management in Optoelectronics (D K Johnstone); Spectral Response Measurements of Short Wave Infrared Detectors (SWIR) (T F Refaat et al.); Full-Chip Power-Supply Noise: The Effect of On-Chip Power-Rail Inductance (C W Fok & D L Pulfrey); Quantum Dot Superlattices in a Constant Electric Field: Localization and Bloch Oscillations (R A Suris & I A Dmitriev); and other papers. Readership: Scientists, engineers and graduate students working in the area of microelectronics, semiconductor materials and devices.

ULSI Process Integration II

ULSI Process Integration II
Proceedings of the International Symposium

by Cor L. Claeys

  • Publisher : The Electrochemical Society
  • Release : 2001
  • Pages : 614
  • ISBN : 9781566773089
  • Language : En, Es, Fr & De
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Nanophononics

Nanophononics
Thermal Generation, Transport, and Conversion at the Nanoscale

by Zlatan Aksamija

  • Publisher : CRC Press
  • Release : 2017-11-22
  • Pages : 234
  • ISBN : 1351609432
  • Language : En, Es, Fr & De
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Heat in most semiconductor materials, including the traditional group IV elements (Si, Ge, diamond), III–V compounds (GaAs, wide-bandgap GaN), and carbon allotropes (graphene, CNTs), as well as emerging new materials like transition metal dichalcogenides (TMDCs), is stored and transported by lattice vibrations (phonons). Phonon generation through interactions with electrons (in nanoelectronics, power, and nonequilibrium devices) and light (optoelectronics) is the central mechanism of heat dissipation in nanoelectronics. This book focuses on the area of thermal effects in nanostructures, including the generation, transport, and conversion of heat at the nanoscale level. Phonon transport, including thermal conductivity in nanostructured materials, as well as numerical simulation methods, such as phonon Monte Carlo, Green’s functions, and first principles methods, feature prominently in the book, which comprises four main themes: (i) phonon generation/heat dissipation, (i) nanoscale phonon transport, (iii) applications/devices (including thermoelectrics), and (iv) emerging materials (graphene/2D). The book also covers recent advances in nanophononics—the study of phonons at the nanoscale. Applications of nanophononics focus on thermoelectric (TE) and tandem TE/photovoltaic energy conversion. The applications are augmented by a chapter on heat dissipation and self-heating in nanoelectronic devices. The book concludes with a chapter on thermal transport in nanoscale graphene ribbons, covering recent advances in phonon transport in 2D materials. The book will be an excellent reference for researchers and graduate students of nanoelectronics, device engineering, nanoscale heat transfer, and thermoelectric energy conversion. The book could also be a basis for a graduate special topics course in the field of nanoscale heat and energy.

Discrimination of Surface and Volume States in Fully Depleted Field-effect Devices on Thick Insulator Substrates

Discrimination of Surface and Volume States in Fully Depleted Field-effect Devices on Thick Insulator Substrates
A Book

by Robert G. Manley

  • Publisher : Unknown Publisher
  • Release : 2011
  • Pages : 364
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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"The behavior of electronic devices fabricated on thin, lightly doped semiconductor layers can be significantly influenced by very low levels of non-ideal charge states. Such devices typically operate in a fully depleted mode, and can exhibit significantly different electrical properties and characteristics than their bulk material counterparts. Traditional interpretation of device characteristics may identify the existence of such non-idealities, but fail to ascertain if the origin is from within the semiconductor layer or associated with the interfaces to adjacent dielectric materials. This leads to ambiguity in how to rectify the behavior and improve device performance. Characterizing non-idealities through electrical means requires adaptations in both measurement techniques and data interpretation. Some of these adaptations have been applied in material systems like silicon-on-insulator (SOI), however in systems where the semiconductor film becomes increasingly isolated on very thick insulators (i.e., glass), the device physics of operation presents new challenges. Overcoming the obstacles in interpretation can directly aid the technology development of thin semiconductor films on thick insulator substrates. The investigation is initiated by isolating the interface of crystalline silicon bonded to a thick boro-aluminosilicate glass insulator. The interface is studied through traditional bulk-capacitance-voltage (C-V) methods, and the electrical fragility of the interface is exposed. This reveals the necessity to discriminate between interface states and bulk defect states. To study methods of discrimination, the physics of field-effect devices fabricated on insulated semiconducting films is explained. These devices operate in a fully depleted state; expressions that describe the C-V relationship with a single gate electrode are derived and explored. The discussion presents an explanation of how surface and volume charge states each contribute to the C-V characteristic behavior. Application of this adapted C-V theory is then applied to the gated-diode, a novel device which has proven to be instrumental in charge state discrimination. Through this adaptation, the gated-diode is used to extract recombination-generation parameters isolated to the top surface, bottom surface and within the volume of the film. The methodology is developed through an exploration of devices fabricated on SOI and silicon-on-glass (SiOG) substrates, and furthers the understanding needed to improve material quality and device performance."--Abstract.

Extreme Environment Electronics

Extreme Environment Electronics
A Book

by John D. Cressler,H. Alan Mantooth

  • Publisher : CRC Press
  • Release : 2017-12-19
  • Pages : 1041
  • ISBN : 143987431X
  • Language : En, Es, Fr & De
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Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Microelectronics Failure Analysis

Microelectronics Failure Analysis
Desk Reference

by EDFAS Desk Reference Committee

  • Publisher : ASM International
  • Release : 2011
  • Pages : 660
  • ISBN : 1615037268
  • Language : En, Es, Fr & De
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Includes bibliographical references and index.

Terrestrial Radiation Effects in ULSI Devices and Electronic Systems

Terrestrial Radiation Effects in ULSI Devices and Electronic Systems
A Book

by Eishi H. Ibe

  • Publisher : John Wiley & Sons
  • Release : 2015-03-02
  • Pages : 296
  • ISBN : 1118479297
  • Language : En, Es, Fr & De
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This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyze radiation effects. A wide variety of prediction, detection, characterization and mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them, and explains how electronic systems including servers and routers are shut down due to environmental radiation. Provides an understanding of how electronic systems are shut down due to environmental radiation by constructing physical models and numerical algorithms Covers both terrestrial and avionic-level conditions Logically presented with each chapter explaining the background physics to the topic followed by various modelling techniques, and chapter summary Written by a widely-recognized authority in soft-errors in electronic devices Code samples available for download from the Companion Website This book is targeted at researchers and graduate students in nuclear and space radiation, semiconductor physics and electron devices, as well as other areas of applied physics modelling. Researchers and students interested in how a variety of physical phenomena can be modelled and numerically treated will also find this book to present helpful methods.

Concise Encyclopedia of Semiconducting Materials & Related Technologies

Concise Encyclopedia of Semiconducting Materials & Related Technologies
A Book

by S. Mahajan,L. C. Kimerling

  • Publisher : Elsevier
  • Release : 2013-10-22
  • Pages : 607
  • ISBN : 1483286576
  • Language : En, Es, Fr & De
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The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.

Dissertation Abstracts International

Dissertation Abstracts International
The sciences and engineering. B

by Anonim

  • Publisher : Unknown Publisher
  • Release : 2007
  • Pages : 129
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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ICT Innovations 2010

ICT Innovations 2010
Second International Conference, ICT Innovations 2010, Ohrid Macedonia, September 12-15, 2010. Revised Selected Papers

by Marjan Gusev,Pece Mitrevski

  • Publisher : Springer
  • Release : 2011-02-24
  • Pages : 378
  • ISBN : 3642193250
  • Language : En, Es, Fr & De
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This book constitutes the refereed proceedings of the Second International Conference, ICT Innovations 2010, held in Ohrid, Macedonia, in September 2010. The 33 revised papers presented together with 5 invited papers were carefully reviewed and selected. The papers address the following topics: internet applications and services, artificial intelligence, bioinformatics, internet, mobile and wireless technologies, multimedia information systems, computer networks, computer security, e-business, cryptography, high-performance-computing, social networks, e-government, as well as GPU computing.