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Gallium Oxide

Gallium Oxide
Materials Properties, Crystal Growth, and Devices

by Masataka Higashiwaki,Shizuo Fujita

  • Publisher : Springer
  • Release : 2020-05-31
  • Pages : 764
  • ISBN : 9783030371524
  • Language : En, Es, Fr & De
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This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

Gallium Oxide

Gallium Oxide
Materials Properties, Crystal Growth, and Devices

by Masataka Higashiwaki,Shizuo Fujita

  • Publisher : Springer Nature
  • Release : 2020-04-23
  • Pages : 764
  • ISBN : 3030371530
  • Language : En, Es, Fr & De
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This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

Gallium Oxide

Gallium Oxide
Technology, Devices and Applications

by Stephen Pearton,Fan Ren,Michael Mastro

  • Publisher : Elsevier
  • Release : 2018-10-15
  • Pages : 507
  • ISBN : 0128145226
  • Language : En, Es, Fr & De
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Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact

Gallium Oxide

Gallium Oxide
A Versatile Compound in Spectrographic Procedures

by W. Morris

  • Publisher : Unknown Publisher
  • Release : 1965
  • Pages : 10
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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CRC Handbook of Metal Etchants

CRC Handbook of Metal Etchants
A Book

by Perrin Walker,William H. Tarn

  • Publisher : CRC Press
  • Release : 1990-12-11
  • Pages : 1415
  • ISBN : 9781439822531
  • Language : En, Es, Fr & De
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This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.

Rational Design of Mesoporous Gallium Oxide and Gallium-based Mixed Oxide Catalysts

Rational Design of Mesoporous Gallium Oxide and Gallium-based Mixed Oxide Catalysts
A Book

by Chinmay A. Deshmane

  • Publisher : Unknown Publisher
  • Release : 2011
  • Pages : 304
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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In the present study, we report the synthesis of thermally stable mesoporous gallium oxide and novel gallium-niobium mixed oxides employing Evaporation Induced Self-Assembly (EISA), Self-Assembly Hydrothermal-Assisted (SAHA) and Self-Assembly Microwave-Assisted approaches. These methods offer the possibility to synthesize thermally stable mesoporous oxides with controlled morphological, textural and structural properties. EISA led to partially crystalline meso porous gallium oxide phases displaying unimodal pore size distribution in the ~2-5 nm range and surface areas as high as 300 m2/g. SAHA led to nanocrystalline mesoporous uniform micron-sized gallium oxide spheres (~0.3-6.5 11m) with narrow size distribution displaying cubic spinel type structure. These mesophases displayed surface areas as high as 220 m2/g and unimodal pore-size distribution in the 5-15 nm range. Microwave-assisted approach led to the formation of nanocrystalline mesoporous gallium oxide phases at low reaction temperature (l30°C) and short reaction times (~15-120 min). Novel semicrystalline mesoporous Gallium-Niobium mixed oxide phases were prepared via Self-Assembly Hydrothermal-Assisted (SAHA) method. This method led to the formation of uniform ~ 0.3-2 11m micron-sized mesoporous mixed gallium-niobium oxide spheres with narrow size distribution displaying surface areas as high as 360 m2/g and unimodal pore size distribution in the 3-6 nm range. Due to their high surface areas, tunability of pore sizes and their acidic nature these single phase and mixed mesoporous gallium-niobium oxides were employed as catalysts in the epoxidation of cyclooctene and isomerization of methyl oleate. For the epoxidation of cyclooctene to epoxycyclooctane carried out at 60°C the mesoporous gallium oxide displayed 100% selectivity towards epoxide with the conversion of cyclooctene in the 4 to 16% range. As the reaction temperature was increased to 80°C, an increase in the cyclooctene conversion was observed. The highest cyclooctene conversion observed was ~52% with a selectivity of 83% toward the epoxide. A clear correlation was observed between the cyclooctene conversion and gallium oxide particle size at both reaction conditions. Agglomerate size between 2-3 11m led to higher cyclooctene conversion, whereas the agglomerate sizes between 4.5-7.5 11m led to lower cyclooctene conversions. For the isomerisation of methyl oleate, highest conversion of 57% with the selectivity of 86% and yield of ~50% was observed over a sample with gallium-niobium composition of 0.3:0.7 wt%. The superior catalytic performance of the gallium-niobium mixed oxide was attributed to its high acidity, crystallinity and mesoporosity.

MBE Grown Aluminum Oxide and Aluminum-gallium Oxide Thin Films for Beta-gallium Power Devices

MBE Grown Aluminum Oxide and Aluminum-gallium Oxide Thin Films for Beta-gallium Power Devices
A Book

by Vasanth Balakrishnan

  • Publisher : Unknown Publisher
  • Release : 2019
  • Pages : 153
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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NBS Monograph

NBS Monograph
A Book

by Anonim

  • Publisher : Unknown Publisher
  • Release : 1959
  • Pages : 129
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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Spectroscopy of Defects in Gallium Oxide

Spectroscopy of Defects in Gallium Oxide
A Book

by Jacob Rudolph Ritter

  • Publisher : Unknown Publisher
  • Release : 2019
  • Pages : 184
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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[beta]-Gallium oxide ([beta]-Ga2O3) is a promising semiconductor for its potential as a material in the field of power electronics. Magnesium doping of Ga2O3 has been shown to create a semi-insulating material, which could be utilized in ultrahigh-power devices. The properties of iridium impurities in undoped, magnesium-doped, and calcium-doped gallium oxide were investigated with IR spectroscopy. In undoped and Ca-doped [beta]-Ga2O3, IR peaks at 3313, 3450, and 3500 cm-1 are tentatively assigned to O–H bond stretching modes of IrH complexes. Hydrogen-annealed Ga2O3:Mg shows an IR peak at 3492 cm-1, and H-annealed Ga2O3: Ca shows an IR peak at 3441 cm-1. These are assigned to an O-H bond-stretching mode of a neutral MgH and CaH complex, respectively. Polarization experiments were used to place the O-H bond of the MgH complex in the a-c plane. Mg, Ca, and Fe doped samples show an Ir4+ electronic transition feature at 5148 cm-1. By measuring the strength of this feature versus photoexcitation, the Ir3+/4+ donor level was determined to lie 2.2-2.3 eV below the conduction band minimum, which matches theory. Ga2O3:Mg also has a range of sidebands between 5100 and 5200 cm-1, attributed to IrMg pairs. Polarized IR measurements were used to show that the 5148 cm-1 peak is anisotropic, weakest for light polarized along the c axis.

Processing and Properties of Advanced Ceramics and Composites II

Processing and Properties of Advanced Ceramics and Composites II
A Book

by Narottam P. Bansal,J. P. Singh,Jacques Lamon,Sung R. Choi,Morsi M. Mahmoud

  • Publisher : John Wiley & Sons
  • Release : 2010-10-01
  • Pages : 322
  • ISBN : 0470930942
  • Language : En, Es, Fr & De
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Three international symposia “Innovative Processing and Synthesis of Ceramics, Glasses and Composites”, “Ceramic Matrix Composites”, and “Microwave Processing of Ceramics” were held during Materials Science & Technology 2009 Conference & Exhibition (MS&T’09), Pittsburgh, PA, October 25-29, 2009. These symposia provided an international forum for scientists, engineers, and technologists to discuss and exchange state-of-the-art ideas, information, and technology on advanced methods and approaches for processing, synthesis and characterization of ceramics, glasses, and composites. A total of 83 papers, including 20 invited talks, were presented in the form of oral and poster presentations. Authors from 19 countries (Austria, Belarus, Brazil, Bulgaria, Canada, China, Egypt, France, Germany, India, Iran, Italy, Japan, Russia, South Korea, Taiwan, Turkey, U.K., and the United States) participated. The speakers represented universities, industries, and government research laboratories.

Functional Oxide Based Thin-Film Materials

Functional Oxide Based Thin-Film Materials
A Book

by Dong-Sing Wuu

  • Publisher : MDPI
  • Release : 2020-05-29
  • Pages : 160
  • ISBN : 3039288377
  • Language : En, Es, Fr & De
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This Special Issue on Functional Oxide-Based Thin-Film Materials touches on the latest advancements in several aspects related to material science: the synthesis of novel oxide, photoluminescence characteristics, photocatalytic ability, energy storage, light emitter studies, low-emissivity glass coatings, and investigations of both nanostructure and thin-film properties. It represents an amalgamation of specialists working with device applications and shedding light on the properties and behavior of thin-film oxides (e.g., GaOx, Ga2O3, HfO2, LiNbO3, and doped ZnO, among numerous others). The papers cover many aspects of thin-film science and technology, from thin film to nanostructure and from material properties to optoelectronic applications, thus reflecting the many interests of the community of scientists active in the field.

Standard X-ray Diffraction Powder Patterns

Standard X-ray Diffraction Powder Patterns
Section 15--data for 112 Substances

by United States. National Bureau of Standards

  • Publisher : Unknown Publisher
  • Release : 1978
  • Pages : 199
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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Standard X-ray Diffraction Powder Patterns

Standard X-ray Diffraction Powder Patterns
A Book

by Anonim

  • Publisher : Unknown Publisher
  • Release : 1960
  • Pages : 129
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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A Dictionary of Chemistry and the Allied Branches of Other Sciences

A Dictionary of Chemistry and the Allied Branches of Other Sciences
A Book

by Henry Watts

  • Publisher : Unknown Publisher
  • Release : 1881
  • Pages : 129
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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I.A Study of the Reduction of Gallium Oxide

I.A Study of the Reduction of Gallium Oxide
II. The Preparation of Gallium Trichloride

by John Frederick Marshall White

  • Publisher : Unknown Publisher
  • Release : 1931
  • Pages : 29
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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Elements of Modern Chemistry

Elements of Modern Chemistry
A Book

by Charles Adolphe Wurtz

  • Publisher : Unknown Publisher
  • Release : 1879
  • Pages : 687
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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Gallium Oxide

Gallium Oxide
A Versatile Compound in Spectrographic Procedures

by University of California, Berkeley. Radiation Laboratory

  • Publisher : Unknown Publisher
  • Release : 1965
  • Pages : 10
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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Gallium Oxide Thin Films for Optoelectronic Applications

Gallium Oxide Thin Films for Optoelectronic Applications
A Book

by Sundar Babu Isukapati

  • Publisher : Unknown Publisher
  • Release : 2018
  • Pages : 138
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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Gallium oxide (Ga2O3) belongs to the family of transparent conducting oxides (TCOs) which have emerged as attractive semiconductor material due their excellent properties. TCOs offer the combination of high conductivity along with excellent transparency in the visible region and a large direct band gap of 4.9 eV. These open the scope for applications for deep UV optical and high power/high voltage electronic device applications. The objective of this research was to fabricate high quality Ga2O3 thin films by magnetron sputtering which would be used to fabricate optoelectronic devices. The thin films were deposited on double polished c-plane sapphire substrates. Four investigations were conducted in order to optimize the quality of the thin films. First, the effect of using different Ar/O2 mixture for deposition was investigated. Second, the post deposition annealing was investigated where the films were annealed in vacuum and in different gas environments. Third, the effect of different substrate temperature from 20 °C to 800 °C was investigated. The fourth investigation was where different amounts of tin were introduced in order to perform n-type doping of the films. The structural and elemental compositional properties of the films were determined using x-ray diffraction and energy dispersive spectrometry measurements. ( ̄2 0 1 ) oriented [beta]-Ga2O3 single crystal thin films were obtained when deposited using 100 % Ar at 500 °C. The optical characteristics obtained by UV-VIS spectroscopy measurements showed excellent transmission of 90 - 95% and optical bandgaps of 4.7- 5.0 eV. Addition of tin dopants in the films produced a decrease in the optical bandgaps with increasing concentration of tin to the films.

Exchange with Deuterium of Alkenes Catalysed by Gallium Oxide

Exchange with Deuterium of Alkenes Catalysed by Gallium Oxide
A Book

by Francis Brian Carleton

  • Publisher : Unknown Publisher
  • Release : 1972
  • Pages : 129
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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Gallium Nitride Nanowire by Nitridation of Electrochemically Grown Gallium Oxide on Silicon

Gallium Nitride Nanowire by Nitridation of Electrochemically Grown Gallium Oxide on Silicon
A Book

by Norizzawati Mohd. Ghazali

  • Publisher : Unknown Publisher
  • Release : 2015
  • Pages : 77
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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