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High Mobility Materials for CMOS Applications

High Mobility Materials for CMOS Applications
A Book

by Nadine Collaert

  • Publisher : Woodhead Publishing
  • Release : 2018-06-29
  • Pages : 384
  • ISBN : 0081020627
  • Language : En, Es, Fr & De
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High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability Provides a broad overview of the topic, from materials integration to circuits

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
A Book

by Jacopo Franco,Ben Kaczer,Guido Groeseneken

  • Publisher : Springer Science & Business Media
  • Release : 2013-10-19
  • Pages : 187
  • ISBN : 9400776632
  • Language : En, Es, Fr & De
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Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

Graphene and Emerging Materials for Post-CMOS Applications

Graphene and Emerging Materials for Post-CMOS Applications
A Book

by Yaw Obeng

  • Publisher : The Electrochemical Society
  • Release : 2009-05
  • Pages : 407
  • ISBN : 1566777135
  • Language : En, Es, Fr & De
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The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.

Interface-engineered Ge MOSFETs for Future High Performance CMOS Applications

Interface-engineered Ge MOSFETs for Future High Performance CMOS Applications
A Book

by Anonim

  • Publisher : Stanford University
  • Release : 2009
  • Pages : 129
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, introduction of performance boosters like novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires several critical issues to be addressed in Ge MOS technology. High quality gate dielectric for surface passivation, low parasitic source/drain resistance and performance improvement in Ge NMOS are among the major challenges in realizing Ge CMOS. Detailed characterization of gate dielectric/channel interface and a deeper understanding of mobility degradation mechanisms are needed to address the Ge NMOS performance problem and to improve PMOS performance. In the first part of this dissertation, the electrical characterization results on Ge NMOS and PMOS devices fabricated with GeON gate dielectric are presented. Carrier scattering mechanisms are studied through low temperature mobility measurements. For the first time, the effect of substrate crystallographic orientation on inversion electron and hole mobilities is investigated. Direct formation of a high-k dielectric on Ge has not given good results in the past. A good quality interface layer is required before the deposition of a high-K dielectric. In the second part of this dissertation, ozone-oxidation process is introduced to engineer Ge/insulator interface. Electrical and structural characterizations and stability analysis are carried out and high quality Ge/dielectric interface with low interface trap density is demonstrated. Detailed extraction of interface trap density distribution across the bandgap and close to band edges of Ge, using low temperature conductance and capacitance measurements is presented. Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several different research groups worldwide. In spite of the increasing interest in Ge, the major mechanisms behind poor Ge NMOS performance have not been completely understood yet. In the last part of this dissertation, the results on Ge NMOS devices fabricated with the ozone-oxidation and the low temperature source/drain activation processes are discussed. These devices achieve the highest electron mobility to-date, about 1.5 times the universal Si mobility. Detailed interface characterizations, trapping analyses and gated Hall device measurements are performed to identify the mechanisms behind poor Ge NMOS performance in the past.

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
A Book

by Z. Karim

  • Publisher : The Electrochemical Society
  • Release : 2011-04-25
  • Pages : 532
  • ISBN : 1566778646
  • Language : En, Es, Fr & De
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This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

Microelectronics, Circuits and Systems

Microelectronics, Circuits and Systems
Select Proceedings of 7th International Conference on Micro2020

by Abhijit Biswas,Raghvendra Saxena,Debashis De

  • Publisher : Springer Nature
  • Release : 2021-08-03
  • Pages : 251
  • ISBN : 9811615705
  • Language : En, Es, Fr & De
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This book presents a collection of peer-reviewed articles from the 7th International Conference on Microelectronics, Circuits, and Systems – Micro 2020. The volume covers the latest development and emerging research topics of material sciences, devices, microelectronics, circuits, nanotechnology, system design and testing, simulation, sensors, photovoltaics, optoelectronics, and its different applications. This book also deals with several tools and techniques to match the theme of the conference. It will be a valuable resource for researchers, professionals, Ph.D. scholars, undergraduate and postgraduate students working in Electronics, Microelectronics, Electrical, and Computer Engineering.

CMOS Past, Present and Future

CMOS Past, Present and Future
A Book

by Henry Radamson,Eddy Simoen,Jun Luo,Chao Zhao

  • Publisher : Woodhead Publishing
  • Release : 2018-04-03
  • Pages : 278
  • ISBN : 0081021402
  • Language : En, Es, Fr & De
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CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements. Addresses challenges and opportunities for the use of CMOS Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities

Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Stress and Strain Engineering at Nanoscale in Semiconductor Devices
A Book

by Chinmay K. Maiti

  • Publisher : CRC Press
  • Release : 2021-06-30
  • Pages : 274
  • ISBN : 1000404935
  • Language : En, Es, Fr & De
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Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Recent Trends in Electronics and Communication

Recent Trends in Electronics and Communication
Select Proceedings of VCAS 2020

by Amit Dhawan,Vijay Shanker Tripathi,Karm Veer Arya,Kshirasagar Naik

  • Publisher : Springer Nature
  • Release : 2021-12-13
  • Pages : 1273
  • ISBN : 9811627614
  • Language : En, Es, Fr & De
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This book comprises select proceedings of the International Conference on VLSI, Communication and Signal processing (VCAS 2020). The contents are broadly divided into three topics – VLSI, Communication, and Signal Processing. The book focuses on the latest innovations, trends, and challenges encountered in the different areas of electronics and communication, especially in the area of microelectronics and VLSI design, communication systems and networks, and image and signal processing. It also offers potential solutions and provides an insight into various emerging areas such as Internet of Things (IoT), System on a Chip (SoC), Sensor Networks, underwater and underground communication networks etc. This book will be useful for academicians and professionals alike.

Frontiers In Electronics: Selected Papers From The Workshop On Frontiers In Electronics 2013 (Wofe-2013)

Frontiers In Electronics: Selected Papers From The Workshop On Frontiers In Electronics 2013 (Wofe-2013)
A Book

by Sorin Cristoloveanu,Michael S Shur

  • Publisher : World Scientific
  • Release : 2014-12-15
  • Pages : 188
  • ISBN : 9814656925
  • Language : En, Es, Fr & De
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This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
A Book

by Jacopo Franco,Ben Kaczer,Guido Groeseneken

  • Publisher : Springer
  • Release : 2013-10-29
  • Pages : 187
  • ISBN : 9789400776623
  • Language : En, Es, Fr & De
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Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
A Book

by Fred Roozeboom,Paul Timans,Evgeni Gusev,Vijay Narayanan,Kuniyuki Kakushima,Zia Karim,Stefan De Gendt

  • Publisher : The Electrochemical Society
  • Release : 2022
  • Pages : 344
  • ISBN : 1607687143
  • Language : En, Es, Fr & De
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ULSI Process Integration 7

ULSI Process Integration 7
A Book

by C. Claeys,H. Iwai,M. Tao,S. Deleonibus,J. Murota

  • Publisher : The Electrochemical Society
  • Release : 2011
  • Pages : 417
  • ISBN : 1607682613
  • Language : En, Es, Fr & De
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SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
A Book

by David Harame

  • Publisher : The Electrochemical Society
  • Release : 2008
  • Pages : 1102
  • ISBN : 1566776562
  • Language : En, Es, Fr & De
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Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

High-Mobility Group-IV Materials and Devices: Volume 809

High-Mobility Group-IV Materials and Devices: Volume 809
A Book

by Materials Research Society. Meeting

  • Publisher : Unknown Publisher
  • Release : 2004-08-18
  • Pages : 304
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator.

SiGe--materials, Processing, and Devices

SiGe--materials, Processing, and Devices
Proceedings of the First International Symposium

by David Louis Harame

  • Publisher : The Electrochemical Society
  • Release : 2004
  • Pages : 1216
  • ISBN : 9781566774208
  • Language : En, Es, Fr & De
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Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gösele

Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gösele
A Book

by C. Colinge

  • Publisher : The Electrochemical Society
  • Release : 2010-10-01
  • Pages : 640
  • ISBN : 1566778239
  • Language : En, Es, Fr & De
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Semiconductor wafer bonding continues to evolve as a crucial technology extending new integration schemes and disseminating new product architectures in such diverse areas as high quality silicon-on-insulator (SOI) materials for electronic applications, Si-Ge strained layers, Germanium-on-Insulator (GeOI), 3D device integration, Si on quartz or glass for thin film displays, compound semiconductor-on-Si heterostructures and Micro-Electro-Mechanical Systems.

Soft Errors

Soft Errors
From Particles to Circuits

by Jean-Luc Autran,Daniela Munteanu

  • Publisher : CRC Press
  • Release : 2017-12-19
  • Pages : 439
  • ISBN : 1351831550
  • Language : En, Es, Fr & De
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Soft errors are a multifaceted issue at the crossroads of applied physics and engineering sciences. Soft errors are by nature multiscale and multiphysics problems that combine not only nuclear and semiconductor physics, material sciences, circuit design, and chip architecture and operation, but also cosmic-ray physics, natural radioactivity issues, particle detection, and related instrumentation. Soft Errors: From Particles to Circuits addresses the problem of soft errors in digital integrated circuits subjected to the terrestrial natural radiation environment—one of the most important primary limits for modern digital electronic reliability. Covering the fundamentals of soft errors as well as engineering considerations and technological aspects, this robust text: Discusses the basics of the natural radiation environment, particle interactions with matter, and soft-error mechanisms Details instrumentation developments in the fields of environment characterization, particle detection, and real-time and accelerated tests Describes the latest computational developments, modeling, and simulation strategies for the soft error-rate estimation in digital circuits Explores trends for future technological nodes and emerging devices Soft Errors: From Particles to Circuits presents the state of the art of this complex subject, providing comprehensive knowledge of the complete chain of the physics of soft errors. The book makes an ideal text for introductory graduate-level courses, offers academic researchers a specialized overview, and serves as a practical guide for semiconductor industry engineers or application engineers.

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology
A Book

by Gang He,Zhaoqi Sun

  • Publisher : John Wiley & Sons
  • Release : 2012-08-10
  • Pages : 590
  • ISBN : 3527646361
  • Language : En, Es, Fr & De
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A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

SiGe and Ge

SiGe and Ge
Materials, Processing, and Devices

by David Louis Harame

  • Publisher : The Electrochemical Society
  • Release : 2006-01-01
  • Pages : 1248
  • ISBN : 1566775078
  • Language : En, Es, Fr & De
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The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.