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High Mobility Materials for CMOS Applications

High Mobility Materials for CMOS Applications
A Book

by Nadine Collaert

  • Publisher : Woodhead Publishing
  • Release : 2018-06-29
  • Pages : 384
  • ISBN : 0081020627
  • Language : En, Es, Fr & De
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High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability Provides a broad overview of the topic, from materials integration to circuits

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
A Book

by Jacopo Franco,Ben Kaczer,Guido Groeseneken

  • Publisher : Springer Science & Business Media
  • Release : 2013-10-19
  • Pages : 187
  • ISBN : 9400776632
  • Language : En, Es, Fr & De
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Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

Graphene and Emerging Materials for Post-CMOS Applications

Graphene and Emerging Materials for Post-CMOS Applications
A Book

by Yaw Obeng

  • Publisher : The Electrochemical Society
  • Release : 2009-05
  • Pages : 407
  • ISBN : 1566777135
  • Language : En, Es, Fr & De
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The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.

Interface-engineered Ge MOSFETs for Future High Performance CMOS Applications

Interface-engineered Ge MOSFETs for Future High Performance CMOS Applications
A Book

by Anonim

  • Publisher : Stanford University
  • Release : 2009
  • Pages : 329
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, introduction of performance boosters like novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires several critical issues to be addressed in Ge MOS technology. High quality gate dielectric for surface passivation, low parasitic source/drain resistance and performance improvement in Ge NMOS are among the major challenges in realizing Ge CMOS. Detailed characterization of gate dielectric/channel interface and a deeper understanding of mobility degradation mechanisms are needed to address the Ge NMOS performance problem and to improve PMOS performance. In the first part of this dissertation, the electrical characterization results on Ge NMOS and PMOS devices fabricated with GeON gate dielectric are presented. Carrier scattering mechanisms are studied through low temperature mobility measurements. For the first time, the effect of substrate crystallographic orientation on inversion electron and hole mobilities is investigated. Direct formation of a high-k dielectric on Ge has not given good results in the past. A good quality interface layer is required before the deposition of a high-K dielectric. In the second part of this dissertation, ozone-oxidation process is introduced to engineer Ge/insulator interface. Electrical and structural characterizations and stability analysis are carried out and high quality Ge/dielectric interface with low interface trap density is demonstrated. Detailed extraction of interface trap density distribution across the bandgap and close to band edges of Ge, using low temperature conductance and capacitance measurements is presented. Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several different research groups worldwide. In spite of the increasing interest in Ge, the major mechanisms behind poor Ge NMOS performance have not been completely understood yet. In the last part of this dissertation, the results on Ge NMOS devices fabricated with the ozone-oxidation and the low temperature source/drain activation processes are discussed. These devices achieve the highest electron mobility to-date, about 1.5 times the universal Si mobility. Detailed interface characterizations, trapping analyses and gated Hall device measurements are performed to identify the mechanisms behind poor Ge NMOS performance in the past.

High Permittivity Gate Dielectric Materials

High Permittivity Gate Dielectric Materials
A Book

by Samares Kar

  • Publisher : Springer Science & Business Media
  • Release : 2013-06-25
  • Pages : 489
  • ISBN : 3642365353
  • Language : En, Es, Fr & De
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"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
A Book

by Z. Karim

  • Publisher : The Electrochemical Society
  • Release : 2011-04-25
  • Pages : 532
  • ISBN : 1566778646
  • Language : En, Es, Fr & De
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This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.

Advanced Gate Stacks for High-Mobility Semiconductors

Advanced Gate Stacks for High-Mobility Semiconductors
A Book

by Athanasios Dimoulas,Evgeni Gusev,Paul C. McIntyre,Marc Heyns

  • Publisher : Springer Science & Business Media
  • Release : 2008-01-01
  • Pages : 384
  • ISBN : 9783540714910
  • Language : En, Es, Fr & De
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This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Advances in GaN, GaAs, SiC and related alloys on silicon substrates

Advances in GaN, GaAs, SiC and related alloys on silicon substrates
symposium held March 24-28, 2008, San Francisco, California, U.S.A.

by Materials Research Society. Meeting Symposium C.

  • Publisher : Cambridge University Press
  • Release : 2008
  • Pages : 289
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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To meet increasingly challenging and complex system requirements, as well as to stay cost effective, it is not enough to use one single semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing attributes with the superior performance attributes of compound semiconductors (CS). Such a combination will enable performance superior to that achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon substrates indicates the worldwide importance of these materials and devices. This book represents the latest technical advancements and information on III-V materials and devices on silicon substrates from universities, national laboratories and industries worldwide. Topics include: GaN-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integration techniques; conventional III-V materials and devices on silicon; and silicon and other materials on silicon.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
A Book

by Fred Roozeboom,Paul Timans,Evgeni Gusev,Vijay Narayanan,Kuniyuki Kakushima,Zia Karim,Stefan De Gendt

  • Publisher : The Electrochemical Society
  • Release : 2021
  • Pages : 344
  • ISBN : 1607687143
  • Language : En, Es, Fr & De
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Different Types of Field-Effect Transistors

Different Types of Field-Effect Transistors
Theory and Applications

by Momčilo Pejović,Milić M. Pejovic

  • Publisher : BoD – Books on Demand
  • Release : 2017-06-07
  • Pages : 192
  • ISBN : 9535131753
  • Language : En, Es, Fr & De
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In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.

Advanced Nanoelectronics

Advanced Nanoelectronics
Post-Silicon Materials and Devices

by Muhammad Mustafa Hussain

  • Publisher : John Wiley & Sons
  • Release : 2019-01-04
  • Pages : 288
  • ISBN : 352734358X
  • Language : En, Es, Fr & De
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Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.

CMOS Past, Present and Future

CMOS Past, Present and Future
A Book

by Henry Radamson,Eddy Simoen,Jun Luo,Chao Zhao

  • Publisher : Woodhead Publishing
  • Release : 2018-04-03
  • Pages : 278
  • ISBN : 0081021402
  • Language : En, Es, Fr & De
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CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements. Addresses challenges and opportunities for the use of CMOS Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities

High-Mobility Group-IV Materials and Devices: Volume 809

High-Mobility Group-IV Materials and Devices: Volume 809
A Book

by Materials Research Society. Meeting

  • Publisher : Unknown Publisher
  • Release : 2004-08-18
  • Pages : 304
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator.

Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2

Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
A Book

by P. Srinivasan

  • Publisher : The Electrochemical Society
  • Release : 2010-04
  • Pages : 247
  • ISBN : 156677795X
  • Language : En, Es, Fr & De
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This issue of ECS Transactions addresses the fundamental material science, characterization, modeling and applications of Graphene, Ge-III-V and Emerging materials designed for alternatives technologies to replace CMOS.

Compound Semiconductor Materials and Devices

Compound Semiconductor Materials and Devices
A Book

by Zhaojun Liu,Tongde Huang,Qiang Li,Xing Lu,Xinbo Zou

  • Publisher : Morgan & Claypool Publishers
  • Release : 2016-02-22
  • Pages : 73
  • ISBN : 1627058532
  • Language : En, Es, Fr & De
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Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
ECS Transactions: Volume 13

by P. J. Timans

  • Publisher : The Electrochemical Society
  • Release : 2008-01-01
  • Pages : 474
  • ISBN : 1566776260
  • Language : En, Es, Fr & De
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This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

SiGe--materials, Processing, and Devices

SiGe--materials, Processing, and Devices
Proceedings of the First International Symposium

by David Louis Harame

  • Publisher : The Electrochemical Society
  • Release : 2004
  • Pages : 1216
  • ISBN : 9781566774208
  • Language : En, Es, Fr & De
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Carrier mobility in advanced channel materials using alternative gate dielectrics

Carrier mobility in advanced channel materials using alternative gate dielectrics

by Eylem Durgun Özben

  • Publisher : Forschungszentrum Jülich
  • Release : 2014-03-20
  • Pages : 115
  • ISBN : 3893369414
  • Language : En, Es, Fr & De
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SiGe and Ge

SiGe and Ge
Materials, Processing, and Devices

by David Louis Harame

  • Publisher : The Electrochemical Society
  • Release : 2006-01-01
  • Pages : 1248
  • ISBN : 1566775078
  • Language : En, Es, Fr & De
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The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

JJAP

JJAP
A Book

by Anonim

  • Publisher : Unknown Publisher
  • Release : 2009
  • Pages : 329
  • ISBN : 9876543210XXX
  • Language : En, Es, Fr & De
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