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Ultra-wide Bandgap Semiconductor Materials

Ultra-wide Bandgap Semiconductor Materials
A Book

by Meiyong Liao,Bo Shen,Zhanguo Wang

  • Publisher : Elsevier
  • Release : 2019-06-18
  • Pages : 503
  • ISBN : 0128172568
  • Language : En, Es, Fr & De
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Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Ultrawide Bandgap Semiconductors

Ultrawide Bandgap Semiconductors
A Book

by Anonim

  • Publisher : Academic Press
  • Release : 2020-10-01
  • Pages : 422
  • ISBN : 0128228717
  • Language : En, Es, Fr & De
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Ultrawide Bandgap Semiconductors, Volume 104 in the Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors who examine such topics as Gallium oxide power devices, Advanced concepts in Ga2O3 power and RF devices, Material epitaxy, doping, and transport properties of (Al,Ga)2O3 alloys and heterostructures, Thermal science and engineering of Ga2O3 materials and devices, Controlling different phases of gallium oxide for solar blind photodetector and power electronics applications, Nanoscale AlGaN and BN: epitaxy, properties and device application, High-Al content AlGaN heterostructures and devices. Provides the authority and expertise of leading contributors from an international board of authors Presents the latest release in the Semiconductors and Semimetals series Updated release includes the latest information on Ultrawide Bandgap Semiconductors

Wide Bandgap Semiconductor-Based Electronics

Wide Bandgap Semiconductor-Based Electronics
A Book

by Fan Ren,Stephen J. Pearton

  • Publisher : IOP Publishing Limited
  • Release : 2020-09-30
  • Pages : 586
  • ISBN : 9780750325141
  • Language : En, Es, Fr & De
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This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers provide reviews on the latest development of materials and devices in these systems.

Wide Bandgap Semiconductors

Wide Bandgap Semiconductors
Fundamental Properties and Modern Photonic and Electronic Devices

by Kiyoshi Takahashi,Akihiko Yoshikawa,Adarsh Sandhu

  • Publisher : Springer Science & Business Media
  • Release : 2007-04-12
  • Pages : 460
  • ISBN : 3540472355
  • Language : En, Es, Fr & De
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This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

Wide Energy Bandgap Electronic Devices

Wide Energy Bandgap Electronic Devices
A Book

by Fan Ren,J. C. Zolper

  • Publisher : World Scientific
  • Release : 2003
  • Pages : 514
  • ISBN : 9812382461
  • Language : En, Es, Fr & De
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Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.

Gallium Oxide

Gallium Oxide
Materials Properties, Crystal Growth, and Devices

by Masataka Higashiwaki,Shizuo Fujita

  • Publisher : Springer Nature
  • Release : 2020-04-23
  • Pages : 764
  • ISBN : 3030371530
  • Language : En, Es, Fr & De
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This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Nitride Wide Bandgap Semiconductor Material and Electronic Devices
A Book

by Yue Hao,Jin Feng Zhang,Jin Cheng Zhang

  • Publisher : CRC Press
  • Release : 2016-11-03
  • Pages : 368
  • ISBN : 1315351838
  • Language : En, Es, Fr & De
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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Wide Bandgap Semiconductor Materials and Devices 20

Wide Bandgap Semiconductor Materials and Devices 20
A Book

by S. Jang,V. Chakrapani,J. Zavada,T. J. Anderson,J. Hite,E. Douglas

  • Publisher : The Electrochemical Society
  • Release : 2019-05-17
  • Pages : 53
  • ISBN : 1607688700
  • Language : En, Es, Fr & De
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This issue of ECS Transactions includes papers based on presentations from the symposium "Wide Bandgap Semiconductor Materials and Devices 20," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.

Wide Bandgap Semiconductor Materials and Devices 19

Wide Bandgap Semiconductor Materials and Devices 19
A Book

by J. Hite,V. Chakrapani,J. Zavada,T. J. Anderson,S. Kilgore

  • Publisher : The Electrochemical Society
  • Release : 2018-05-04
  • Pages : 130
  • ISBN : 1607688352
  • Language : En, Es, Fr & De
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Optoelectronic Devices

Optoelectronic Devices
III-nitrides

by M Razeghi,Mohamed Henini

  • Publisher : Elsevier
  • Release : 2004
  • Pages : 575
  • ISBN : 9780080444260
  • Language : En, Es, Fr & De
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Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Wide Bandgap Semiconductor Electronics And Devices

Wide Bandgap Semiconductor Electronics And Devices
A Book

by Singisetti Uttam,Razzak Towhidur,Zhang Yuewei

  • Publisher : World Scientific
  • Release : 2019-12-10
  • Pages : 260
  • ISBN : 9811216495
  • Language : En, Es, Fr & De
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With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications
A Book

by Yogesh Kumar Sharma

  • Publisher : BoD – Books on Demand
  • Release : 2018-09-12
  • Pages : 152
  • ISBN : 1789236681
  • Language : En, Es, Fr & De
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SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

III-Nitride Electronic Devices

III-Nitride Electronic Devices
A Book

by Rongming Chu,Keisuke Shinohara

  • Publisher : Academic Press
  • Release : 2019-10
  • Pages : 422
  • ISBN : 0128175443
  • Language : En, Es, Fr & De
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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field

Topics in Growth and Device Processing of III-V Semiconductors

Topics in Growth and Device Processing of III-V Semiconductors
A Book

by S. J. Pearton,C. R. Abernathy,F. Ren

  • Publisher : World Scientific
  • Release : 1996
  • Pages : 546
  • ISBN : 9789810218843
  • Language : En, Es, Fr & De
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This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Wide Bandgap Semiconductor Power Devices

Wide Bandgap Semiconductor Power Devices
Materials, Physics, Design, and Applications

by B. Jayant Baliga

  • Publisher : Woodhead Publishing
  • Release : 2018-10-17
  • Pages : 418
  • ISBN : 0081023073
  • Language : En, Es, Fr & De
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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Power Electronics Device Applications of Diamond Semiconductors

Power Electronics Device Applications of Diamond Semiconductors
A Book

by Satoshi Koizumi,Hitoshi Umezawa,Julien Pernot,Mariko Suzuki

  • Publisher : Woodhead Publishing
  • Release : 2018-06-29
  • Pages : 466
  • ISBN : 0081021844
  • Language : En, Es, Fr & De
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Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance Examines why diamond semiconductors could lead to superior power electronics Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Gallium Nitride and Related Wide Bandgap Materials and Devices

Gallium Nitride and Related Wide Bandgap Materials and Devices
A Market and Technology Overview 1998-2003

by R. Szweda

  • Publisher : Elsevier
  • Release : 2000-07-07
  • Pages : 446
  • ISBN : 9780080532301
  • Language : En, Es, Fr & De
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The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Wide Bandgap Semiconductor Materials and Devices 12

Wide Bandgap Semiconductor Materials and Devices 12
A Book

by J. A. Bardwell

  • Publisher : The Electrochemical Society
  • Release : 2011-04
  • Pages : 210
  • ISBN : 1566778670
  • Language : En, Es, Fr & De
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This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.

Simulation and Modelling of Electrical Insulation Weaknesses in Electrical Equipment

Simulation and Modelling of Electrical Insulation Weaknesses in Electrical Equipment
A Book

by Ricardo Albarracín Sánchez

  • Publisher : BoD – Books on Demand
  • Release : 2018-10-17
  • Pages : 214
  • ISBN : 1789237688
  • Language : En, Es, Fr & De
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Around 80% of electrical consumption in an industrialised society is used by machinery and electrical drives. Therefore, it is key to have reliable grids that feed these electrical assets. Consequently, it is necessary to carry out pre-commissioning tests of their insulation systems and, in some cases, to implement an online condition monitoring and trending analysis of key variables, such as partial discharges and temperature, among others. Because the tests carried out for analysing the dielectric behaviour of insulation systems are commonly standardised, it is of interest to have tools that simulate the real behaviour of those and their weaknesses to prevent electrical breakdowns. The aim of this book is to provide the reader with models for electrical insulation systems diagnosis.

Springer Handbook of Electronic and Photonic Materials

Springer Handbook of Electronic and Photonic Materials
A Book

by Safa Kasap,Peter Capper

  • Publisher : Springer
  • Release : 2017-10-04
  • Pages : 1536
  • ISBN : 331948933X
  • Language : En, Es, Fr & De
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The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.